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HiPerFETTM Power MOSFETs
IXFB38N100Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 trr 300 ns
PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight 1.6 mm (0.063 in.) from case for 10 s Mounting Force Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 30 40 38 152 38 60 5.0 20 890 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages PLUS 264TM package for clip or spring mounting Space savings High power density
30...120/7.5...27 N/lb 10 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 1000 2.5 V 5.5 V 200 nA TJ = 25C TJ = 125C 50 A 3 mA 0.25
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID =8 mA VGS = 30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1
(c) 2005 IXYS All rights reserved
DS98949E(09/05)
IXFB38N100Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 24 40 7200 VGS = 0 V, VDS = 25 V, f = 1 MHz 950 170 25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) 28 57 15 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 105 0.14 0.13 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 264TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf QG(on) QGS QGD RthJC RthCK
VDS = 20 V; ID = 0.5 * ID25
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = 25A -di/dt = 100 A/s VR = 100 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 38 152 1.5 300 1.4 9 A A V ns C A
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXFB38N100Q2
Fig. 1. Output Characteristics @ 25 Deg. C
20 16 ID - Amperes 12 8 4 0 0 1 2 3 4 VDS - Volts 5 6 7 VGS = 10V 9V 8V 7V 6V 5V 75 60 ID - Amperes 45 30 5V 15 0 0 5 10 15 VDS - Volts 20 25 VGS = 10V 9V 8V 7V
Fig. 2. Extended Output Characteristics @ 25 deg. C
6V
Fig. 3. Output Characteristics @ 125 Deg. C
45 VGS = 10V RDS(on) - Normalized 36 ID - Amperes 27 18 9 0 0 5 10 15 20 25 VDS - Volts 9V 8V 7V 6V 2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4
Fig. 4. RDS(on) Normalized to I D25 Value vs. Junction Temperature
5V
ID = 38A ID = 19A
-50
-25
0
25
50
75
100 125 150
T J - Degrees Centigrade
Fig. 5. RDS(on) Normalized to I D25 Value vs. ID
2.8 2.5 RDS(on) - Normalized 2.2
ID - Amperes
Fig. 6. Drain Current vs. Case Temperature
40
TJ = 125C
32 24 16 8 0
1.9 1.6 1.3 1 0.7 0 20 40 60 80 TJ = 25C
-50
-25
0
25
50
75
100 125 150
I D - Amperes
T C - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXFB38N100Q2
Fig. 7. Input Admittance
40 32 ID - Amperes 24 16 8 0 3 3.5 4 4.5 VGS - Volts 5 5.5 6 TJ = -40C 25C 125C Gfs - Siemens 75 TJ = -40C 60 45 30 15 0 0 10 20 ID - Amperes 30 40 TJ = 25C TJ = 125C
Fig. 8. Transconductance
Fig. 9. Source Current vs. Source-ToDrain Voltage
-100 -80 IS - Amperes
V GS - Volts
Fig. 10. Gate Charge
10 VDS = 500V 8 6 4 2 0 ID = 19A IG = 10mA
-60 -40 -20 0 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 VSD - Volts TJ = 125C TJ = 25C
0
50
100
150
200
250
QG - nanoCoulombs
Fig. 11. Capacitance
10000 Ciss R(th)JC - (C/W) f=1Mhz 1000 1
Fig. 12. Maximum Transient Thermal Resistance
Capacitance - pF
Coss
0.1
Crss 100 0 10 20 VDS - Volts 30 40 0.01 1 10 100 Pulse Width - milliseconds 1000
IXYS reserves the right to change limits, test conditions, and dimensions.

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